Active production, 800 V CoolMOS switch
The SPD02N80C3ATMA1: Packaged in a TO-252-3 (DPak) surface-mount case with a PG-TO252-3 supplier designation, it suits automated assembly flows for AC-DC converters, PFC stages, and auxiliary flyback supplies.
Rds(on) at junction temperature — not 25 °C
The 2.7 Ohm maximum on-resistance is specified at 1.2 A drain current with 10 V gate drive at 25 °C junction. At 125 °C junction — the realistic operating point in a 42 W dissipation envelope — Rds(on) roughly doubles, pushing conduction losses higher. Budget the hot resistance for thermal calculations, not the 25 °C headline. Gate drive voltage is specified at 10 V for both maximum and minimum Rds(on), so a 10 V gate rail is the practical choice to get the full enhancement.
Gate charge and switching speed
Total gate charge is 16 nC at 10 V gate drive, with input capacitance Ciss of 290 pF at 100 V drain-source.
Temperature range and package
The TO-252-3 (DPak) footprint is a standard surface-mount power package, with the tab as the drain connection — board layout must handle the 42 W maximum dissipation with adequate copper area on the drain pad.