Infineon SIPMOS P-Channel MOSFET, SPB80P06PGATMA1, 60V Vdss, 80A Id, 23 mOhm Rds(on) at 10V, 173 nC Qg, TO-263-3 (D2Pak) surface mount, -55 to 175°C.
| Parameter | Value |
|---|---|
| Series | SIPMOS® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 80A (Tc) |
| Power dissipation | 340W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 5.5mA |
| Rds on (Max) @ id, vgs | 23mOhm @ 64A, 10V |
| Gate charge (Qg) (Max) @ vgs | 173 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5033 pF @ 25 V |
Total gate charge is 173 nC at 10 V — a moderate figure for a 80 A P-channel.
Maximum power dissipation is 340 W at case temperature — derate aggressively above 25°C; the 175°C limit is the absolute ceiling, not a continuous operating target.
Supplied in a TO-263-3 (D²Pak) surface-mount package, supplier device code PG-TO263-3-2. Surface-mount mounting type; no through-hole hardware needed.
The datasheet contains critical electrical specs and package details needed for design validation.
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