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Infineon Technologies SPB80N06SL2-7

Infineon SPB80N06SL2-7 N-Channel MOSFET, 55V, 80A, 7mOhm

MPNSPB80N06SL2-7
End of Life

Infineon OptiMOS SPB80N06SL2-7, N-Channel Automotive MOSFET, 55V Vdss, 80A Id, 7mOhm Rds(on) at 10V, 130nC Qg, TO-263-3 (D²Pak) package, -55°C to 175°C.

$0.79Ref. price · indicative, final on quote
Infineon Technologies SPB80N06SL2-7 datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSNot applicable
SeriesOptiMOS®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SPB80N06SL2-7 specifications
ParameterValue
SeriesOptiMOS®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation210W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id2V @ 150µA
Rds on (Max) @ id, vgs7mOhm @ 60A, 10V
Gate charge (Qg) (Max) @ vgs130 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3160 pF @ 25 V

Product details

175°C junction — under-hood thermal headroom

The wide temperature range also means the Rds(on) will roughly double at 175°C — budget for that in your worst-case conduction loss calculation. That Qg figure tells the gate-driver designer the switching energy per cycle — at 100 kHz, the average gate current is about 13 mA, well within a standard driver's capability.

TO-263-3 — footprint and thermal reality

Packaged in a TO-263-3 (D²Pak) surface-mount case with two leads plus the drain tab — the supplier device package is PG-TO263-3-2.

Frequently asked questions

What is the Rds(on) of SPB80N06SL2-7?

The maximum Rds(on) is 7 mOhm at 60 A drain current with 10 V gate drive. At 4.5 V gate drive the on-resistance is higher — the datasheet's typical curve shows the increase.