30 V, 80 A N-channel — CoolMOS™ in a D²Pak
The Infineon SPB80N03S2L05 is a 30 V, 80 A N-channel MOSFET from the CoolMOS™ series, built on a metal-oxide semiconductor trench process. It is designed for low-voltage power conversion where conduction loss and switching speed both matter — synchronous rectification, DC-DC bricks, load switches, and motor pre-drive stages. The 4.9 mOhm maximum on-resistance at 10 V gate drive keeps I²R losses low at full load, while the 89.7 nC gate charge at 10 V gives a reasonable switching loss profile for hard-switched topologies up to a few hundred kilohertz.
Rds(on) and gate charge — what they mean for the switching stage
The 4.9 mOhm Rds(on) is specified at 55 A drain current with 10 V on the gate — that is the hot condition, not a best-case cold number. If your design runs the gate at 4.5 V (the lower drive voltage listed), expect higher on-resistance; the datasheet curve will show the multiplier. The 89.7 nC total gate charge at 10 V tells the gate-driver designer how much energy per cycle must be sourced and sunk.
Thermal and package — board-level fit
The D²Pak (TO-263-3) footprint is a surface-mount power package with a large drain tab that conducts heat into the PCB copper plane. The 167 W power dissipation at the case (Tc) assumes an infinite heatsink — real-world dissipation depends on the board's copper area, layer stack, and airflow.
Lifecycle and sourcing
That means no last-time-buy pressure for BOM planners. For dual-sourcing or a pin-compatible second source, Infineon's own CoolMOS™ portfolio includes several 30 V N-channel parts in the same D²Pak footprint; cross-reference against your specific gate-drive voltage and switching frequency to confirm fit.