The Infineon SPB20N60C3ATMA1 is an N-channel CoolMOS™ power MOSFET rated for 650 V drain-source voltage and 20.7 A continuous drain current at 25 °C case temperature. Gate charge of 114 nC at 10 V tells the driver what it has to push each cycle — a figure that sizes the gate resistor and drive current for the target switching frequency. The PG-TO263-3-2 (D²Pak) surface-mount package suits automated assembly on an aluminium-core or IMS PCB for thermal management.
That 150 °C limit governs the derating curve — at case temperatures above 25 °C the 20.7 A figure drops, and the 208 W power dissipation rating (Tc) is what the thermal design must stay under. For outdoor telecom rectifiers or industrial motor drives with limited airflow, this part keeps headroom.
Surface-mount in the TO-263-3 / D²Pak footprint. The supplier device package is PG-TO263-3-2, which is the Infineon code for the same outline.
ROHS3 compliant. The series is CoolMOS™, Infineon's high-voltage MOSFET platform.
