650 V CoolMOS™ — what the ratings mean for the switching stage
The Infineon SPB20N60C3ATMA1 is an N-channel CoolMOS™ power MOSFET rated for 650 V drain-source voltage and 20.7 A continuous drain current at 25 °C case temperature. The 190 mOhm maximum on-resistance at 10 V gate drive sets the conduction loss baseline for a PFC boost, LLC resonant half-bridge, or flyback primary switch. Gate charge of 114 nC at 10 V tells the driver what it has to push each cycle — a figure that sizes the gate resistor and drive current for the target switching frequency. The PG-TO263-3-2 (D²Pak) surface-mount package suits automated assembly on an aluminium-core or IMS PCB for thermal management.
Temperature range and environment
Junction temperature spans -55 °C to 150 °C, covering military-grade cold extremes and the hot side of a sealed power supply. That 150 °C limit governs the derating curve — at case temperatures above 25 °C the 20.7 A figure drops, and the 208 W power dissipation rating (Tc) is what the thermal design must stay under. For outdoor telecom rectifiers or industrial motor drives with limited airflow, this part keeps headroom.
Package and mounting
Surface-mount in the TO-263-3 / D²Pak footprint. The large tab carries drain potential and the primary heat path — PCB copper area under the tab is the heatsink. The supplier device package is PG-TO263-3-2, which is the Infineon code for the same outline. Available in Tape & Reel or Cut Tape, so it feeds into a pick-and-place line without a reel change.
Lifecycle and compliance
ROHS3 compliant. The series is CoolMOS™, Infineon's high-voltage MOSFET platform.