600 V CoolMOS — the offline power stage workhorse
The SPB11N60C2: It is built on Infineon's CoolMOS technology, which optimises the on-resistance versus gate-charge trade-off for hard-switching topologies like PFC boost stages, flyback converters, and two-switch forward converters.
Gate charge and switching — 41.5 nC at 10 V
Total gate charge of 41.5 nC at 10 V defines the drive current needed per switching frequency. Input capacitance is 1460 pF at 25 V drain-source, which together with the gate charge defines the turn-on and turn-off delay. The 5.5 V maximum gate threshold at 500 µA drain current ensures the device is fully enhanced at 10 V drive, with headroom before the ±20 V absolute maximum.
Package and thermal — D²Pak with exposed tab
The SPB11N60C2 comes in the TO-263-3 (D²Pak) surface-mount package, supplier code PG-TO263-3-2. Maximum power dissipation is 125 W at case temperature.
Lifecycle and sourcing
The RoHS compliance is listed as non-compliant, so verify the BOM's exemption status or confirm the lead-free equivalent if the design requires full RoHS conformance.
