CoolMOS N-channel for 500 V line — what it delivers
The Infineon SPB04N50C3 is a 500 V N-channel CoolMOS power MOSFET in a surface-mount PG-TO263-3-2 (D²Pak) package, rated for 4.5 A continuous drain current at 25 °C case temperature and 50 W power dissipation. It is built for offline switch-mode power supplies, PFC stages, and flyback converters where 500 V blocking and moderate conduction loss are the design anchors. The 950 mOhm maximum on-resistance at 2.8 A with a 10 V gate drive sets the conduction loss budget. Gate charge of 22 nC at 10 V keeps the drive energy modest, compatible with standard MOSFET gate drivers or a simple bootstrap circuit.
What the key ratings mean for the BOM
500 V drain-source voltage (Vdss) covers universal-input offline converters with margin for reflected voltage and leakage inductance spikes. The ±20 V maximum gate-source rating is typical for standard gate drive levels; drive voltage for minimum Rds(on) is 10 V. Input capacitance of 470 pF at 25 V Vds means the gate driver sees a light load — switching losses from Ciss charging are low, helping efficiency at higher frequencies. The 22 nC gate charge confirms a fast turn-on/off with modest gate current. Operating junction temperature range of -55 °C to 150 °C covers industrial and automotive under-hood environments. The 50 W power dissipation at case temperature is the absolute maximum; real designs derate per the thermal curve above 25 °C.
Sourcing and lifecycle
The SPB04N50C3 carries an active lifecycle status — no end-of-life notice, no last-time-buy pressure. It is ROHS3 compliant, which matches current European and global environmental directives.