600 V CoolMOS N-channel — the high-voltage switch for the BOM
This is the part you reach for when the rail sits at 300-400 VDC and you need a hard-switching transistor in a TO-263 surface-mount package.
The on-resistance is specified at Vgs = 10 V and Id = 2 A, which is the typical operating point for a 10 V gate-drive rail. At 3.2 A full load, the conduction loss is I²R = (3.2)² × 1.4 ≈ 14.3 W, which must be dissipated through the TO-263 package's exposed pad. The 38 W maximum power dissipation at case temperature gives about 2.7× headroom at full current — enough for most designs without oversized heatsinks. Gate charge is 16 nC at 10 V, which translates to a gate-drive current of about 1.6 mA at 100 kHz switching frequency (Qg × fsw). This is light enough that a standard gate-driver IC can handle it without excessive power loss in the driver stage.
PG-TO263-3-2 — surface-mount with a thermal tab
The package is the standard D²Pak (TO-263) variant with two leads plus the drain tab. The ±20 V maximum gate-source voltage is typical for CoolMOS; the 5.5 V gate threshold at 135 µA drain current means the device is fully enhanced by a standard 10 V gate drive.