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Infineon Technologies SPB02N60C3

Infineon SPB02N60C3 CoolMOS N-Channel MOSFET, 600V, 1.8A

MPNSPB02N60C3
End of Life

Infineon CoolMOS™ SPB02N60C3 N-channel power MOSFET, 600 V Vdss, 1.8 A Id, 3 Ohm Rds(on) at 10 V, 12.5 nC gate charge, TO-263-3 (D²Pak) surface mount, -55 to 150 °C.

$0.47Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

SPB02N60C3 Technical Specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C1.8A (Tc)
Power dissipation25W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id3.9V @ 80µA
Rds on (Max) @ id, vgs3Ohm @ 1.1A, 10V
Gate charge (Qg) (Max) @ vgs12.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds200 pF @ 25 V

Product details

600 V CoolMOS in a TO-263 — what this part does

The SPB02N60C3: The 600 V drain-to-source rating (Vdss) places it in the high-voltage switching tier — suitable for flyback converters, PFC stages, and auxiliary power supplies where the bulk rail sits at 400 VDC or below.

Switching losses and thermal budget

The 200 pF input capacitance at 25 V drain-source is a direct measure of the gate-drive load at turn-on. Paired with the 12.5 nC gate charge, the switching energy per cycle is low enough that a 25 W maximum power dissipation (Tc) is the practical ceiling — the designer sizes the heatsink to keep the junction below 150 °C under worst-case load. Gate threshold voltage is specified at 3.9 V maximum at 80 µA drain current, which means a 10 V drive rail (the recommended drive voltage for minimum Rds(on)) gives ample overdrive margin. The ±20 V absolute maximum gate-source rating leaves headroom for ringing on the gate node in a hard-switched topology.

Package and board integration

The SPB02N60C3 is supplied in a TO-263-3 (D²Pak) surface-mount package, supplier code PG-TO263-3-2. The large exposed drain tab on the bottom provides a low thermal resistance path to the PCB copper plane — the board layout must allocate enough copper area on the drain pad to dissipate the 25 W maximum. The three-lead footprint is standard for D²Pak; the centre lead is the drain, the outer two are source and gate.

Frequently asked questions

What is the Rds(on) of SPB02N60C3?

The maximum on-resistance is 3 Ohm at a drain current of 1.1 A and a gate-source voltage of 10 V. This is the value used for conduction loss calculations in the target operating point.

Is SPB02N60C3 RoHS compliant?

Yes, the SPB02N60C3 is ROHS3 compliant, meaning it meets the restriction levels for the six original RoHS substances plus the four phthalates added in EU RoHS 3 (Directive 2015/863).