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Infineon Technologies SPA20N60CFD — Discrete Semiconductors

Infineon SPA20N60CFD CoolMOS N-Ch MOSFET, 600 V, 20.7 A

MPNSPA20N60CFD
Active

Infineon CoolMOS™ SPA20N60CFD, N-Channel MOSFET, 600 V Vdss, 20.7 A Id, 220 mOhm Rds(on) at 10 V, 124 nC Qg, TO-220-3 Full Pack, -55°C to 150°C TJ.

$3.0600Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesCoolMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

SPA20N60CFD specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C20.7A (Tc)
Power dissipation35W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 1mA
Rds on (Max) @ id, vgs220mOhm @ 13.1A, 10V
Gate charge (Qg) (Max) @ vgs124 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2400 pF @ 25 V

Product details

600 V CoolMOS™ — the switching-loss anchor for the BOM

The SPA20N60CFD: It comes in the TO-220 Full Pack (PG-TO220-3-313) — the fully isolated package that bolts directly to a heatsink without an insulating pad.

Rds(on) is specified at a 13.1 A drain current with 10 V gate drive — the CoolMOS™ superjunction structure delivers this on-resistance at a gate charge that keeps the driver dissipation manageable in hard-switched topologies. The 5 V gate-threshold maximum at 1 mA drain current is typical for a standard-threshold CoolMOS™ device — the 10 V drive voltage for minimum Rds(on) is the recommended bias for the gate driver.

Junction temperature and the thermal budget

The 35 W maximum power dissipation at the case is the thermal ceiling with the TO-220 Full Pack bolted to a heatsink — derate linearly above 25 °C case temperature.

ROHS3 compliant — passes the EU material restriction for new designs without a waiver.

Frequently asked questions

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