Infineon CoolMOS™ N-Channel MOSFET, SPA20N60C3XKSA1, 600V Vdss, 20.7A Id, 190mOhm Rds(on) @ 13.1A, TO-220-3 Full Pack, Through Hole, -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 20.7A (Tc) |
| Power dissipation | 34.5W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 3.9V @ 1mA |
| Rds on (Max) @ id, vgs | 190mOhm @ 13.1A, 10V |
| Gate charge (Qg) (Max) @ vgs | 114 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2400 pF @ 25 V |
Gate charge is 114 nC at 10 V, and input capacitance measures 2400 pF at 25 V drain-source, both figures a designer uses to size the gate-drive circuit and estimate switching losses in a hard-switched converter.
Conduction loss at 13.1 A, 10 V drive is 190 mOhm Rds(on). The 34.5 W package dissipation rating (Tc) leaves headroom for switching losses.
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