SPA20N60C3

Infineon Technologies

Infineon CoolMOS™ SPA20N60C3, N-Channel MOSFET, 600 V Vdss, 20.7 A Id, 190 mOhm Rds(on) @ 10 V, TO-220-3 Full Pack, -55°C to 150°C TJ.

Infineon Technologies SPA20N60C3
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Technical specifications

SPA20N60C3 specifications
Parameter / AttributeSpecification / Value
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Current - continuous drain (Id) @ 25°C20.7A (Tc)
Power dissipation34.5W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.9V @ 1mA
Rds on (Max) @ id, vgs190mOhm @ 13.1A, 10V
Gate charge (Qg) (Max) @ vgs114 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2400 pF @ 25 V

Technical details

600 V CoolMOS in a full-pack TO-220

Gate charge and switching

Total gate charge is 114 nC at 10 V, with an input capacitance of 2400 pF at 25 V drain-source. That gate charge figure is moderate for a 600 V, 20 A class device — a standard gate-driver IC or a transformer-coupled drive handles it without heroic measures.

Maximum power dissipation is 34.5 W at case temperature — the full-pack package's thermal resistance is higher than a standard TO-220, but the isolated tab simplifies the mechanical design enough that it often wins on total system cost.

SPA20N60C3
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