Infineon CoolMOS™ SPA11N60C3IN, N-Channel MOSFET, 650 V Vdss, 11 A Id, 380 mOhm Rds(on) at 10 V, TO-220-3 Full Pack, -55 to 150 °C junction.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 11A (Tc) |
| Power dissipation | 33W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 3.9V @ 500µA |
| Rds on (Max) @ id, vgs | 380mOhm @ 7A, 10V |
| Gate charge (Qg) (Max) @ vgs | 60 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1200 pF @ 25 V |
This is the conduction-loss figure to use in a hard-switched topology like a flyback or PFC boost stage.
The base product number is SPA11N, which covers the family of voltage and package variants — useful when searching for datasheets or PCN notifications.
Maximum power dissipation is 33 W at case temperature, which sets the thermal budget for the heatsink design.
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