Skip to main content
Infineon Technologies SPA11N60C3 — Discrete Semiconductors

Infineon SPA11N60C3 CoolMOS N-Ch MOSFET

MPNSPA11N60C3
Active

Infineon CoolMOS™ SPA11N60C3, N-Channel MOSFET, 600 V Vdss, 11 A Id, 380 mOhm Rds(on) @ 10 V, TO-220-3 Full Pack (PG-TO220-3-111), -55°C to 150°C junction.

$6.4800Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

SPA11N60C3 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation33W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.9V @ 500µA
Rds on (Max) @ id, vgs380mOhm @ 7A, 10V
Gate charge (Qg) (Max) @ vgs60 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1200 pF @ 25 V

Product details

The SPA11N60C3: It belongs to the C3 generation of Infineon's superjunction family, designed for hard-switching topologies where low Rds(on) and fast switching are both needed. The full-pack (isolated) TO-220 eliminates the need for an insulating washer and thermal grease in many designs, simplifying assembly and improving thermal contact to the heatsink.

The specified drive voltage for achieving the rated Rds(on) is 10 V, with a maximum gate-source voltage of ±20 V. The input capacitance of 1200 pF at 25 V drain-source is typical for this class; it means the gate-drive loop inductance needs to be kept under 10 nH to avoid Miller plateau oscillations.

There is no last-time-buy risk, no need to hunt for surplus or broker stock.

Frequently asked questions

What is the Rds(on) of SPA11N60C3?

The Rds(on) is 380 mOhm maximum at 7 A drain current and 10 V gate drive. This is the on-resistance you design your conduction losses around in a switching power supply.

What is the maximum Vgs for SPA11N60C3?

The maximum gate-source voltage is ±20 V. The recommended drive voltage for achieving the rated Rds(on) is 10 V.