SPA11N60C3

Infineon Technologies

Infineon CoolMOS™ SPA11N60C3, N-Channel MOSFET, 600 V Vdss, 11 A Id, 380 mOhm Rds(on) @ 10 V, TO-220-3 Full Pack (PG-TO220-3-111), -55°C to 150°C junction.

Infineon Technologies SPA11N60C3
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[IN STOCK] In Stock: 43 pcs
$5.11/ pc

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Technical specifications

SPA11N60C3 specifications
Parameter / AttributeSpecification / Value
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation33W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.9V @ 500µA
Rds on (Max) @ id, vgs380mOhm @ 7A, 10V
Gate charge (Qg) (Max) @ vgs60 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1200 pF @ 25 V

Technical details

SPA11N60C3
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