800 V N-channel in the Full-Pack TO-220
The SPA08N80C3XKSA1 is an N-channel 800 V MOSFET from Infineon's CoolMOS™ series, rated for 8 A continuous drain current at 25°C case temperature. The 800 V drain-source breakdown voltage (Vdss) places it squarely in off-line flyback, PFC boost, and LLC half-bridge topologies where the DC bus sits at 380-400 V and the reflected voltage pushes the drain above 600 V. The 650 mOhm maximum Rds(on) at 5.1 A and 10 V gate drive gives a conduction loss of roughly 3.3 W at the rated current — manageable in the TO-220 Full Pack with the 40 W power dissipation ceiling.
Gate charge and switching budget
Total gate charge (Qg) is 60 nC at Vgs = 10 V. For a typical hard-switched PFC running at 70 kHz, the average gate-drive current needed is Qg × fsw = 60 nC × 70 kHz = 4.2 mA — well within a standard driver. The 1100 pF input capacitance (Ciss) at 100 V drain bias determines the rise and fall times at the gate; paired with a 10 Ω gate resistor, the RC time constant is about 11 ns, clean enough to avoid Miller plateau ringing in a well-laid-out PCB.
Full-Pack isolation and mounting
The PG-TO220-3-31 package (TO-220-3 Full Pack) moulds the backside tab in epoxy — the tab is electrically isolated from the drain. This eliminates the need for a mica washer or silicone pad between the device and the heatsink, cutting assembly time and thermal resistance. The mounting hole accepts a standard M3 screw; torque to 0.6 N·m per the package outline. The -55°C to 150°C junction temperature range covers cold-start and self-heating in an enclosed power supply.
Lifecycle and supply posture
The base product number SPA08N80 anchors the CoolMOS™ C3 family; no pin-compatible successor has been announced for this voltage/current bin. ROHS3 compliance (no exemptions) means it ships unrestricted into EU and UK markets. Sourced through independent and authorized distribution; availability and current pricing confirmed at RFQ against the BOM quantity.