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Infineon Technologies SPA08N50C3 — Discrete Semiconductors

SPA08N50C3 Infineon CoolMOS N-Ch MOSFET, 560V, 7.6A, TO-220

MPNSPA08N50C3
Active

Infineon Technologies CoolMOS™ N-Channel Power MOSFET, SPA08N50C3, 560V Vdss, 7.6A Id, 600mOhm Rds(on), TO-220-3 Full Pack, Through Hole, ROHS3 Compliant.

$0.8100Ref. price · indicative, final on quote
Infineon Technologies SPA08N50C3 datasheet (PDF)
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesCoolMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

SPA08N50C3 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage560 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7.6A (Tc)
Power dissipation32W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.9V @ 350µA
Rds on (Max) @ id, vgs600mOhm @ 4.6A, 10V
Gate charge (Qg) (Max) @ vgs32 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds750 pF @ 25 V

Product details

Device identity and key parametrics

The SPA08N50C3 is an N-channel power MOSFET from Infineon's CoolMOS™ series, built on a charge-compensation technology that reduces on-resistance per silicon area. Maximum on-resistance is 600 mOhm at a gate drive of 10 V and 4.6 A drain current. The threshold voltage is specified at 3.9 V maximum with a drain current of 350 µA, and the gate is rated to ±20 V. Maximum power dissipation is 32 W at the case temperature.

Package, mounting, and temperature range

Housed in a TO-220-3 Full Pack (PG-TO220-3-111) through-hole package, the device has a fully isolated backside — no heatsink pad is electrically live, which simplifies mounting to a grounded chassis or shared heatsink without an insulating washer. The junction temperature range is -55 °C to 150 °C. The Full Pack variant trades slightly higher thermal resistance for electrical isolation.

Frequently asked questions

Will SPA08N50C3 drop into a board designed for IMZA65R027M1HXKSA1?

No — the IMZA65R027M1HXKSA1 is a 650 V CoolSiC™ MOSFET in a TO-247 package with a different gate drive range (18 V typical, ±23 V/-5 V max) and a much lower 34 mOhm Rds(on). The SPA08N50C3 is a 560 V CoolMOS™ in a TO-220 Full Pack. They are not pin-compatible or functionally interchangeable without a board redesign.