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Infineon Technologies SPA07N60C3XKSA1 — Discrete Semiconductors

Infineon SPA07N60C3XKSA1 CoolMOS N-Ch MOSFET, 650V 7.3A

MPNSPA07N60C3XKSA1
Active

Infineon CoolMOS™ SPA07N60C3XKSA1 N-channel MOSFET, 650 V Vdss, 7.3 A continuous drain, 600 mOhm Rds(on) at 10 V, 27 nC gate charge, TO-220-3 Full Pack, -55°C to 150°C junction.

$3.1200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

SPA07N60C3XKSA1 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7.3A (Tc)
Power dissipation32W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.9V @ 250µA
Rds on (Max) @ id, vgs600mOhm @ 4.6A, 10V
Gate charge (Qg) (Max) @ vgs27 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds790 pF @ 25 V

Product details

650 V CoolMOS in a full-pack TO-220

The Full Pack (isolated tab) variant means the metal tab is electrically isolated — no insulating pad or washer needed when bolting to a grounded heatsink, which simplifies assembly and improves thermal coupling. This part belongs to the CoolMOS C3 family, Infineon's established 650 V superjunction platform for hard-switching power converters.

Gate drive and switching — what the numbers tell you

Gate charge is 27 nC at 10 V. Input capacitance is 790 pF at 25 V.

Thermal and environmental reach

Maximum power dissipation is 32 W at case temperature.

Sourcing posture — active and available

This is a standard Infineon catalog part, not a last-time-buy or NRND item.

Frequently asked questions

What is the typical application of SPA07N60C3XKSA1?

As a 650 V CoolMOS in a TO-220 Full Pack, this part is suited for power factor correction stages, flyback and forward converters, and other hard-switched AC-DC power supplies in the 100-300 W range. The full-pack package suits designs where the heatsink is at chassis ground potential.