600 V, 7.3 A N-channel CoolMOS — switching performance and package
The SPA07N60C2: The 600 mOhm Rds(on) at 4.6 A, 10 V keeps conduction losses manageable in hard-switching topologies. Housed in a TO-220 Full Pack (PG-TO220-3-31), the fully isolated plastic package eliminates the need for a mica insulator or thermal pad when mounting to a heatsink — the back of the package is electrically isolated, simplifying assembly and reducing thermal resistance to the heatsink.
Gate drive and switching characteristics
With a typical gate charge of 35 nC at 10 V, the SPA07N60C2 presents a moderate load to the gate driver — a 1 A driver can switch it in roughly 35 ns, making it compatible with standard PWM controllers in power supplies and lighting ballasts. Input capacitance is 970 pF at 25 V Vds, a figure that influences the switching speed and driver sizing; lower capacitance means faster turn-on and turn-off transitions, reducing switching losses at higher frequencies. The maximum gate-source voltage is ±20 V, and the recommended drive voltage for achieving the specified Rds(on) is 10 V — a typical gate-drive rail for many offline power designs.
Thermal and environmental range
Rated for operation from -55°C to 150°C junction temperature, the device suits industrial and automotive environments where ambient temperatures can exceed 85°C. Maximum power dissipation is 32 W at case temperature, with derating above 25°C per the datasheet curve. The threshold voltage is specified at 5.5 V maximum at 350 µA drain current, ensuring a clean turn-on above the gate-drive threshold and good noise immunity in the off state.