Infineon CoolMOS™ N-Channel MOSFET, SPA06N80C3XKSA1, 800 V drain-source, 6 A continuous drain, 900 mOhm Rds(on) at 10 V, 41 nC gate charge, TO-220-3 Full Pack, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 6A (Tc) |
| Power dissipation | 39W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 3.9V @ 250µA |
| Rds on (Max) @ id, vgs | 900mOhm @ 3.8A, 10V |
| Gate charge (Qg) (Max) @ vgs | 41 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 785 pF @ 100 V |
The TO-220 Full Pack (PG-TO220-3-31) isolates the tab electrically — no insulating pad needed, but the junction-to-case thermal resistance is higher than a standard TO-220. Maximum power dissipation is 39 W at case temperature, derated above that point.
Gate threshold voltage is 3.9 V maximum at 250 µA drain current, so a 10 V gate drive is recommended to achieve the rated Rds(on).
Design engineers need the datasheet to validate electrical specs, pinout, and thermal characteristics for circuit design.
Buyers need to find immediate availability for production or repairs to avoid supply chain delays.
Sourcing buyers require price quotes for BOM costing and budget planning.
Maintenance techs and brokers need to know lifecycle status to plan for replacements or last-time buy.
Techs and buyers need drop-in alternatives during shortages or if part becomes obsolete.
Engineers and techs need pin configuration for PCB layout and troubleshooting.