The SP000629364: The Infineon IPP60R950C6 is a 600 V N-channel CoolMOS power MOSFET in a TO-220-3 through-hole package.
Maximum power dissipation is 37 W at case temperature. Gate threshold voltage is 3.5 V maximum at 130 µA drain current.
SP000629364 Infineon IPP60R950C6 CoolMOS N-Ch 600V 4.4A
MPNSP000629364
End of Life
Infineon CoolMOS™ IPP60R950C6, N-Channel MOSFET, 600V Vdss, 4.4A Id, 950mOhm Rds(on) @ 10V, 13nC Qg, TO-220-3, -55°C to 150°C.
$0.43Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSNot applicable
SeriesCoolMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026
Specifications
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 4.4A (Tc) |
| Power dissipation | 37W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 3.5V @ 130µA |
| Rds on (Max) @ id, vgs | 950mOhm @ 1.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 13 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 280 pF @ 100 V |
Product details
Frequently asked questions
Can I use IPP60R950C6 in a 600V power supply?
Yes. The drain-source voltage rating is 600 V, so it is suitable for offline flyback, PFC boost, and LLC resonant converters operating from a 400 V DC bus (rectified 230 V AC) with adequate derating margin.