Skip to main content
Infineon Technologies SN7002NH6433XTMA1
Infineon Technologies

Infineon SN7002NH6433XTMA1 N-Channel MOSFET

MPNSN7002NH6433XTMA1
End of Life

Infineon SIPMOS N-Channel MOSFET, 60 V drain-source, 200 mA continuous drain, 5 Ohm Rds(on) at 10 V gate drive, SOT-23-3 surface-mount package, -55°C to 150°C junction temperature range.

$0.36Ref. price · indicative, final on quote
SN7002NH6433XTMA1 datasheet
PackagingTO-236-3, SC-59, SOT-23-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

SN7002NH6433XTMA1 Technical Specifications
ParameterValue
SeriesSIPMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C200mA (Ta)
Power dissipation360mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1.8V @ 26µA
Rds on (Max) @ id, vgs5Ohm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs1.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds45 pF @ 25 V

Product details

Small-signal N-channel switch for general-purpose low-current loads

The SN7002NH6433XTMA1: Infineon SIPMOS N-channel MOSFET, 60 V drain-source, 200 mA continuous drain, SOT-23-3 package. 5 Ohm max on-resistance at 500 mA with 10 V gate drive; 360 mW package dissipation at 25°C.

60 V blocking and 150°C junction — industrial and automotive temperature reach

Gate threshold voltage is 1.8 V max at 26 µA drain current. For a saturated switch with minimum voltage drop, drive the gate with 5 V or more.

Gate drive and switching — low Qg suits GPIO-driven loads

Total gate charge is 1.5 nC at 10 V, and input capacitance is 45 pF at 25 V drain-source. A microcontroller GPIO with 10 mA drive capability can switch this FET at several MHz without a dedicated gate driver — the switching loss is dominated by the load current and drain voltage, not the gate drive circuit.

Frequently asked questions

Can SN7002NH6433XTMA1 replace 2N7002?

The SN7002NH6433XTMA1 is a functional equivalent to the 2N7002 in the same SOT-23 footprint: both are N-channel small-signal MOSFETs rated 60 V drain-source with similar current and Rds(on) specs. Pin-compatible for a drop-in replacement in most low-current switching applications. Confirm the gate threshold and drive voltage match your circuit before committing.