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Infineon Technologies SN7002IXTSA1

Infineon SN7002IXTSA1 N-Channel MOSFET, 60 V, 200 mA

MPNSN7002IXTSA1
End of Life

Infineon SN7002IXTSA1, N-Channel small-signal MOSFET, 60 V drain-source, 200 mA continuous drain, 5 Ohm Rds(on) at 500 mA, SOT-23-3 package, active production, ROHS3 compliant.

$0.33Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

SN7002IXTSA1 Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C200mA (Ta)
Power dissipation360mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1.8V @ 26µA
Rds on (Max) @ id, vgs5Ohm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs0.9 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds32 pF @ 30 V

Product details

Low-current signal switch in a SOT-23-3 footprint

The Infineon SN7002IXTSA1 is an N-channel enhancement-mode MOSFET built for low-power signal switching and load management in 12 V and 24 V industrial systems. With a 60 V drain-source rating and 200 mA continuous drain current, it handles relay coil drives, logic-level translation, and small solenoid actuation where the load stays under a few hundred milliamps. The 5 Ohm on-resistance at 500 mA drive current means conduction loss is manageable at these current levels, but the part is not intended for power conversion — its strength is in switching small loads with minimal board area.

Parametric fit for GPIO-driven loads

The gate threshold is 1.8 V maximum at 26 µA, so 3.3 V logic provides solid overdrive. Input capacitance is 32 pF at 30 V drain-source, keeping switching losses low in the kHz range. The 360 mW dissipation limit in free air (Ta) is the real thermal ceiling — in a 85 °C ambient, derate to about 220 mW, which still covers a 200 mA load at 5 Ohm Rds(on).

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