1200 V NPT IGBT in TO-247-3 — BOM-fit for motor drive and power conversion
The Infineon SKW07N120 is an NPT (non-punch-through) IGBT rated for 1200 V collector-emitter breakdown and 16.5 A continuous collector current, with a pulsed capability of 27 A. It comes in a TO-247-3 through-hole package (PG-TO247-3-1 supplier device package). The NPT construction provides a positive temperature coefficient, making it suitable for paralleling in higher-current stages without thermal runaway.
Switching and conduction — 70 nC gate charge, 1 mJ switching energy
Gate charge is 70 nC total, which sets the drive current needed for a given switching frequency — at 20 kHz the average gate drive current is about 1.4 mA, well within the capability of a standard gate-driver IC. Switching energy is 1 mJ under the test condition of 800 V bus, 8 A load, 47 Ohm gate resistor, and 15 V gate drive. Turn-on delay is 27 ns; turn-off delay is 440 ns at 25 °C junction.
Conduction loss at the operating point
Vce(on) is specified at 3.6 V maximum with Vge = 15 V and Ic = 8 A. This is the conduction loss floor at the test condition — actual on-state voltage rises with junction temperature, so the designer should derate for the expected hot-case junction temperature. The 125 W maximum power dissipation assumes the TO-247-3 package is mounted with adequate heatsinking.
Temperature grade and application envelope
The 150 °C maximum junction allows headroom for high ambient temperature in motor-drive cabinets or power-supply enclosures. The NPT IGBT also includes a co-packaged fast-recovery diode with a reverse recovery time of 60 ns, which reduces turn-on losses in hard-switching topologies.
ROHS3 compliant.