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Infineon Technologies SKB15N60E8151

Infineon SKB15N60E8151 IGBT, 31 A, 600 V, NPT, D²Pak-263

MPNSKB15N60E8151
End of Life

Infineon SKB15N60E8151 NPT IGBT, 600 V collector-emitter breakdown, 31 A continuous collector, 570 µJ switching energy, 76 nC gate charge, 139 W max power, PG-TO263-3-2 package, -55 to 150°C junction.

$1.36Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

SKB15N60E8151 Technical Specifications
ParameterValue
IGBT typeNPT
Input typeStandard
Mounting typeSurface Mount
Voltage - collector emitter breakdown600 V
Current - collector (Ic)31 A
Current - collector pulsed62 A
Power - max139 W
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Gate charge76 nC
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Test condition400V, 15A, 21Ohm, 15V
Switching energy570µJ
Td (on/off) @ 25°C32ns/234ns
Vce(on) (Max) @ vge, ic2.4V @ 15V, 15A
Reverse recovery time279 ns

Product details

600 V NPT IGBT in a D²Pak — what it brings to the power stage

The NPT structure gives a positive temperature coefficient on Vce(sat), so paralleling multiple devices shares current without hot-spot runaway — a real advantage in a 400 VDC-bus PFC or motor-drive output stage where you might need two or three in parallel to hit the load current.

31 A continuous, 62 A pulsed — derating matters at 150°C junction

Continuous collector rating is 31 A, with a 62 A pulsed capability. The junction temperature range stretches from -55°C to 150°C, so the 31 A number applies at a 25°C case temperature — expect the usable current to drop as the die heats up. The 139 W max power dissipation gives a rough ceiling for the heatsink design; the actual safe operating area depends on the case temperature and the switching frequency you run. Switching energy is 570 µJ under the test condition of 400 V, 15 A, 21 Ohm gate resistor, 15 V gate drive. That 570 µJ per pulse, multiplied by the switching frequency, sets the switching loss component of the total dissipation. The 76 nC total gate charge tells the driver what current it needs to push to hit your target rise time.

Switching speed and reverse recovery

Turn-on delay is 32 ns, turn-off delay 234 ns at 25°C. The 279 ns reverse recovery time belongs to the internal co-pack diode — relevant if you are using the IGBT in a half-bridge leg where the diode conducts the freewheel current. The 2.4 V typical Vce(sat) at 15 V gate, 15 A collector is the conduction voltage drop that multiplies with the duty cycle to give the conduction loss.

Frequently asked questions

What is the Vce(sat) of SKB15N60E8151?

Typical Vce(sat) is 2.4 V at 15 V gate drive and 15 A collector current. This is the conduction voltage drop used to calculate the IGBT's on-state loss in your duty-cycle budget.