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Infineon Technologies SKB02N60

Infineon SKB02N60 NPT IGBT, 600V 6A, D²Pak, -55 to 150°C

MPNSKB02N60
End of Life

Infineon SKB02N60 NPT IGBT, 600 V Collector-Emitter Breakdown, 6 A Collector Current, 14 nC Gate Charge, 30 W Power Dissipation, Surface Mount TO-263-3 D²Pak, -55 to 150 °C Operating Temperature.

$0.65Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SKB02N60 specifications
ParameterValue
IGBT typeNPT
Input typeStandard
MountingSurface Mount
Voltage - collector emitter breakdown600 V
Current - collector (Ic)6 A
Current - collector pulsed12 A
Power - max30 W
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Gate charge14 nC
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Test condition400V, 2A, 118Ohm, 15V
Switching energy64µJ
Td (on/off) @ 25°C20ns/259ns
Vce(on) (Max) @ vge, ic2.4V @ 15V, 2A
Reverse recovery time130 ns

Product details

With a gate charge of 14 nC and switching energies of 64 µJ under test conditions (400 V, 2 A, 118 Ω gate, 15 V gate drive), it is designed for medium-frequency hard-switching applications such as motor drives, power inverters, induction heating, and switch-mode power supplies up to several tens of kilohertz. The NPT structure provides rugged short-circuit behaviour and a positive temperature coefficient for easy paralleling.

Rated for junction temperatures from -55 °C to 150 °C.

The TO-263-3 (D²Pak) footprint matches industry-standard surface-mount power packages. The tab is the collector terminal; PCB copper area on the drain pad serves as the primary heatsink. For designs exceeding 30 W dissipation, supplemental thermal management via a heatsink attached to the package top or forced airflow is recommended. The PG-TO263-3-2 supplier device package variant is identical in footprint.

It is ROHS3 compliant.

Frequently asked questions

What is the gate charge of SKB02N60?

The total gate charge is 14 nC, which simplifies gate-drive design and keeps switching losses moderate at medium frequencies.