Infineon HEXFET P-Channel MOSFET, SI4435DYTR, 30 Vdss, 8 A continuous drain, 20 mOhm Rds(on) at 10 V, 60 nC gate charge, -55°C to 150°C junction temperature, 8-SOIC package.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 8A (Tc) |
| Power dissipation | 2.5W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 20mOhm @ 8A, 10V |
| Gate charge (Qg) (Max) @ vgs | 60 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2320 pF @ 15 V |
The 2320 pF input capacitance at 15 V drain-source gives a rough switching-loss estimate for the target frequency.
The 8-SOIC package (0.154-inch body width, 3.90 mm) with surface-mount termination is standard for medium-power MOSFETs; the 2.5 W power dissipation at 25°C ambient requires adequate copper area on the PCB for thermal management.
For new designs, a pin-compatible P-channel MOSFET in the same SO-8 footprint should be evaluated.
The SI4435DYTR is obsolete and sourced through independent distribution. Submit an RFQ for current availability and pricing; quotes are confirmed at order time.
Maximum on-resistance is 20 mOhm at 8 A drain current with 10 V gate drive.