Skip to main content
Infineon Technologies SI4435DYPBF — Discrete Semiconductors

SI4435DYPBF P-Channel MOSFET, 30V, 8A, 20mOhm, SOIC-8

MPNSI4435DYPBF
End of Life

International Rectifier HEXFET® SI4435DYPBF, P-Channel MOSFET, 30 V Vdss, 8 A continuous drain, 20 mOhm Rds(on) max at 10 V, 8-SOIC surface-mount package, -55 to 150 °C operating range.

$0.6800Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

SI4435DYPBF specifications
ParameterValue
SeriesHEXFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C8A (Tc)
Power dissipation2.5W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs20mOhm @ 8A, 10V
Gate charge (Qg) (Max) @ vgs60 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2320 pF @ 15 V

Product details

P-channel load switch with a 20 mOhm ceiling

Gate charge is 60 nC at 10 V, so the driver doesn't need a monster gate current, but the 2320 pF input capacitance at 15 V means the gate-drive trace should be kept short and the source impedance low to avoid ringing.

Where the 30 V and 150 °C ratings matter

The 30 V Vdss covers 12 V and 24 V industrial rails, 2S through 6S Li-ion battery stacks, and automotive nominal 12 V systems with load-dump margin. The 2.5 W power dissipation at 25 °C ambient is the package limit in free air; if you are pulling 8 A continuously, you need the PCB copper to sink the heat, or the junction will climb fast. At 8 A and 20 mOhm, conduction loss is 1.28 W — that leaves about 1.2 W of headroom before you hit the package ceiling at 25 °C ambient, so the thermal design is tight but workable with a decent ground-plane pour.

Frequently asked questions

What is the Rds(on) of SI4435DYPBF?

The maximum on-resistance is 20 mOhm at 8 A drain current with 10 V gate drive. At 4.5 V gate drive the Rds(on) will be higher — the datasheet curve should be consulted for the exact value at reduced gate voltage.

Can SI4435DYPBF be used for battery protection?

Yes — the 30 V Vdss covers 2S through 6S Li-ion stacks, and the 20 mOhm Rds(on) keeps conduction losses low. The P-channel polarity means it can be placed on the high side without a charge pump. Ensure the 2.5 W package dissipation limit is respected at the expected continuous current.

Is SI4435DYPBF RoHS compliant?

The part number suffix 'PBF' indicates lead-free / RoHS-compliant construction. No further RoHS certificate details are in this listing, but the 'PBF' designation is the standard RoHS indicator for this manufacturer.