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Infineon Technologies SI4420DYPBF — Discrete Semiconductors

SI4420DYPBF N-Channel MOSFET, 30V, 9mOhm, Obsolete

MPNSI4420DYPBF
Obsolete

Vishay / Siliconix SI4420DYPBF, HEXFET® Series, N-Channel MOSFET, 30V Drain-Source, 12.5A Continuous Drain, 9mOhm Rds(on) at 10V, 8-SOIC Package, Tube.

$0.9000Ref. price · indicative, final on quote
Infineon Technologies SI4420DYPBF datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4420DYPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C12.5A (Ta)
Power dissipation2.5W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs9mOhm @ 12.5A, 10V
Gate charge (Qg) (Max) @ vgs78 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2240 pF @ 15 V

Product details

30V N-channel HEXFET with 9mOhm on-resistance

The SI4420DYPBF: The 9mOhm maximum Rds(on) at 10V gate drive makes it a strong fit for low-voltage load switching, DC-DC converter synchronous rectification, and battery protection circuits where conduction loss matters.

No official successor or last-time-buy date is recorded in the available records, so the only channel is surplus or broker inventory.

The 78nC gate charge at 10V and 2240pF input capacitance at 15V drain-source define the switching speed budget. For a 100-200kHz hard-switched converter, the gate driver needs to source and sink enough peak current to keep switching losses under control. The 4.5V minimum drive voltage allows logic-level gate drive from a 5V rail, but the 9mOhm Rds(on) is specified at 10V — expect roughly double the resistance at 4.5V, so the thermal margin narrows if you run at reduced gate voltage.

Frequently asked questions

What is the replacement for SI4420DYPBF?

No official replacement is documented. For a new design, look at current-production 30V N-channel MOSFETs in the SOIC-8 package with similar Rds(on) and gate charge — Vishay's own SiR series or Infineon's OptiMOS line are common cross-shop candidates, but verify pin compatibility and thermal performance from the respective datasheets.