Gate charge and switching speed
The SI4410DYTRPBF: Total gate charge is 45 nC at 10 V, and input capacitance is 1585 pF at 15 V Vds.
Obsolete — sourcing through independent distribution
Infineon lists the SI4410DYTRPBF as obsolete.
SI4410DYTRPBF N-Channel MOSFET, 30 V, 13.5 mOhm, obsolete
MPNSI4410DYTRPBF
Obsolete
Infineon HEXFET® N-channel MOSFET, 30 V Vdss, 10 A continuous drain, 13.5 mOhm max Rds(on) at 10 V, 8-SOIC package, -55 to 150 °C operating junction temperature.
$0.8500Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Ta) |
| Power dissipation | 2.5W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 13.5mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 45 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1585 pF @ 15 V |
Product details
Frequently asked questions
What is the Rds(on) of SI4410DYTRPBF?
The maximum on-resistance is 13.5 mOhm at 10 A drain current with 10 V gate drive.
What package is SI4410DYTRPBF?
The SI4410DYTRPBF comes in an 8-SOIC surface-mount package, 0.154-inch (3.90 mm) width.