600 V, 36 A NPT IGBT in TO-247-3
The Infineon SGW20N60HS is an NPT (Non-Punch-Through) IGBT rated for 600 V collector-emitter breakdown and 36 A continuous collector current, housed in a TO-247-3 through-hole package. The NPT construction provides a positive temperature coefficient for Vce(on), which simplifies paralleling multiple devices, and offers robust short-circuit withstand capability typical of this generation. With a maximum power dissipation of 178 W and a junction temperature range from -55°C to 150°C, it is suited for motor drives, uninterruptible power supplies, welding inverters, and induction heating — applications that demand reliable switching under high thermal stress.
Switching and conduction losses at the operating point
At the test condition of 400 V bus, 20 A collector current, 16 Ohm gate resistor, and 15 V gate drive, the SGW20N60HS delivers a typical switching energy of 690 µJ per pulse. The turn-on delay is 18 ns and turn-off delay is 207 ns at 25°C, which sets the minimum dead-time requirement in a half-bridge leg to avoid shoot-through. The on-state voltage Vce(on) is 3.15 V max at 15 V gate drive and 20 A — this figure drives the conduction loss calculation at the operating current and junction temperature. Total gate charge is 100 nC, which defines the average gate-drive current needed at the target switching frequency. For a 20 kHz switching application, the driver must supply about 2 mA average current (100 nC × 20 kHz), well within the capability of standard isolated gate-driver ICs. The pulsed collector current rating of 80 A provides headroom for inrush or transient overloads during start-up or fault conditions.
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