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Infineon Technologies SGP20N60HS

SGP20N60HS IGBT, 600 V, 36 A, NPT, TO-220-3

MPNSGP20N60HS
End of Life

Infineon SGP20N60HS NPT IGBT, 600 V collector-emitter breakdown, 36 A continuous collector, 178 W max power, TO-220-3 through-hole package, -55°C to 150°C junction temperature.

$1.25Ref. price · indicative, final on quote
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
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Specifications

SGP20N60HS Technical Specifications
ParameterValue
IGBT typeNPT
Input typeStandard
Mounting typeThrough Hole
Voltage - collector emitter breakdown600 V
Current - collector (Ic)36 A
Current - collector pulsed80 A
Power - max178 W
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Gate charge100 nC
CaseTO-220-3
Test condition400V, 20A, 16Ohm, 15V
Switching energy690µJ
Td (on/off) @ 25°C18ns/207ns
Vce(on) (Max) @ vge, ic3.15V @ 15V, 20A

Product details

The SGP20N60HS: The 600 V collector-emitter breakdown voltage and 36 A continuous collector current are rated. The pulsed current rating is 80 A.

Gate charge and switching energy — sizing the driver and heatsink

Total gate charge is 100 nC. Switching energy under test conditions (400 V, 20 A, 16 Ω gate resistor, 15 V gate drive) is 690 µJ.

NPT die — ruggedness and parallel operation

The NPT IGBT type gives a positive temperature coefficient for Vce(sat). The standard input type means no integrated gate clamp.

Temperature range — military/industrial deployment

The junction temperature range is -55°C to 150°C. The TO-220-3 package with the PG-TO220-3-1 supplier code is the standard lead-formed version.

Frequently asked questions

What is the SGP20N60HS IGBT type and what does NPT mean?

The SGP20N60HS is an NPT (non-punch-through) IGBT. NPT die have a positive temperature coefficient for Vce(sat), which makes them suitable for paralleling without current hogging, and they offer inherent short-circuit ruggedness — typically 10 µs — for motor-drive and inverter applications.