The SGP20N60HS: The 600 V collector-emitter breakdown voltage and 36 A continuous collector current are rated. The pulsed current rating is 80 A.
Gate charge and switching energy — sizing the driver and heatsink
Total gate charge is 100 nC. Switching energy under test conditions (400 V, 20 A, 16 Ω gate resistor, 15 V gate drive) is 690 µJ.
NPT die — ruggedness and parallel operation
The NPT IGBT type gives a positive temperature coefficient for Vce(sat). The standard input type means no integrated gate clamp.
Temperature range — military/industrial deployment
The junction temperature range is -55°C to 150°C. The TO-220-3 package with the PG-TO220-3-1 supplier code is the standard lead-formed version.
