Gate charge and switching energy
The SGP10N60A: Total gate charge is 52 nC. Switching energy is 320 µJ under test conditions of 400 V, 10 A, 25 Ω gate resistor, and 15 V gate drive — a benchmark for loss estimation in hard-switched topologies. Turn-on delay is 28 ns and turn-off delay 178 ns at 25°C, giving a reasonable balance for 10–40 kHz PWM bridges.
NPT technology choice
The NPT structure provides a positive temperature coefficient of Vce(sat), which simplifies paralleling multiple devices — current sharing improves as junction temperature rises, unlike some trench IGBTs that can exhibit negative coefficient at low current. Rated collector pulsed current (Icm) is 40 A, double the continuous 20 A rating, giving headroom for short-duration overloads during motor start or capacitor inrush.