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Infineon Technologies SDT05S60XK

Infineon SDT05S60XK SiC Schottky Diode, 600V 5A, TO-220-2

MPNSDT05S60XK
End of Life

Infineon SDT05S60XK Silicon Carbide Schottky Diode, 600 V DC Reverse Voltage, 5 A Average Rectified Current, Zero Reverse Recovery Time (trr=0 ns), 1.7 V Forward Voltage at 5 A, -55 to 175 °C Junction, PG-TO220-2 Through-Hole Package.

$2.18Ref. price · indicative, final on quote
Infineon Technologies SDT05S60XK datasheet (PDF)
PackagingTO-220-2
RoHSNot applicable
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SDT05S60XK specifications
ParameterValue
Diode typeSilicon Carbide Schottky
MountingThrough Hole
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if1.7 V @ 5 A
Current - reverse leakage @ vr200 µA @ 600 V
Current - average rectified5A
Operating temperature - junction-55°C ~ 175°C
SpeedNo Recovery Time > 500mA (Io)
PackageBulk
CaseTO-220-2
Capacitance @ vr,170pF @ 1V, 1MHz
Reverse recovery time0 ns

Product details

SiC Schottky — zero recovery loss in the PFC boost stage

In a PFC boost stage, this part replaces a silicon ultrafast diode and cuts diode-related switching loss.

Forward voltage and junction temperature — thermal design anchors

That 8.5 W conduction loss at full rated current sets the thermal budget: with a junction-to-case thermal resistance typical of a TO-220, the designer needs a heatsink sized to keep Tj below 175 °C. The 170 pF capacitance at 1 V reverse bias keeps capacitive switching losses manageable at high frequencies.

Package and mounting — through-hole with a tab cathode

Housed in a PG-TO220-2, this is a two-lead through-hole package with the metal tab forming the cathode connection. The tab must be electrically isolated from the heatsink or tied to the output rail, depending on the topology. The through-hole body is straightforward to hand-solder and rework, which matters for prototype builds and low-to-medium volume production.

Frequently asked questions

What is the reverse recovery time of SDT05S60XK?

The reverse recovery time is 0 ns. As a silicon carbide Schottky diode, it has no minority carrier storage, so there is no reverse recovery charge to extract. This eliminates the switching loss component that a standard silicon diode would contribute.