SiC Schottky — zero recovery loss in the PFC boost stage
The SDT05S60XK: Its defining characteristic is a reverse recovery time of 0 ns — there is no stored charge to sweep out when the diode commutates, so the switching loss contribution from reverse recovery is eliminated entirely. In a PFC boost stage, this part replaces a silicon ultrafast diode and cuts diode-related switching loss.
Forward voltage and junction temperature — thermal design anchors
Forward voltage is specified at 1.7 V maximum at 5 A, 25 °C junction. That 8.5 W conduction loss at full rated current sets the thermal budget: with a junction-to-case thermal resistance typical of a TO-220, the designer needs a heatsink sized to keep Tj below 175 °C. The 170 pF capacitance at 1 V reverse bias keeps capacitive switching losses manageable at high frequencies.
Package and mounting — through-hole with a tab cathode
Housed in a PG-TO220-2, this is a two-lead through-hole package with the metal tab forming the cathode connection. The tab must be electrically isolated from the heatsink or tied to the output rail, depending on the topology. The through-hole body is straightforward to hand-solder and rework, which matters for prototype builds and low-to-medium volume production.