256 Mbit HYPERRAM™ — dense volatile storage on a narrow bus
Infineon's S80KS2564GACHI040 is a 256 Mbit Pseudo SRAM (PSRAM) from the HYPERRAM™ series, designed as a pin-efficient volatile memory expansion for SoCs with a HyperBus controller. It combines the density of DRAM with an SRAM-like interface, eliminating the need for refresh management from the host. The part runs on a 1.7 V to 2 V supply and communicates over a HyperBus at up to 200 MHz, delivering a 35 ns initial access time and sustained throughput suitable for code shadowing, display frame buffers, or packet buffering in embedded systems.
35 ns access time — what it means for the bus
The 35 ns access time is the random-read latency from the first HyperBus command to the first data word. In a system with a 200 MHz HyperBus clock (5 ns period), this translates to about 7 clock cycles before data starts streaming. This is on par with other HYPERRAM devices and well within the timing budget for most Cortex-M and RISC-V SoCs that integrate a HyperBus controller. The 200 MHz clock also gives a theoretical peak data rate of 400 MB/s in DDR mode (double data rate), though real throughput depends on controller efficiency and bus utilization.
Industrial temperature and supply range
Rated for -40°C to 85°C ambient, this part is suited for outdoor telecom, factory automation, and industrial control enclosures where temperature swings are common. The 1.7 V to 2 V supply range aligns with low-power SoC rails; note the upper limit is 2 V, not the typical 3.3 V, so a dedicated regulator or PMIC rail is required. The 49-FBGA (8x8 mm) package uses a 0.8 mm ball pitch, which is routable on a standard 4-layer PCB with blind vias if needed.
Active lifecycle — no LTB risk
S80KS2564GACHI040 carries an Active lifecycle status. It is ROHS3 compliant. For new designs, this part is a safe selection today, though as with any single-sourced memory, maintaining a qualified second source is good practice for production continuity.