The Infineon S80KS2563GABHB020 is a 256 Mbit Pseudo SRAM (PSRAM) from the HYPERRAM family, designed to deliver high-density volatile storage through a low-pin-count Octal SPI interface. It is organized as 32M x 8 bits and operates from a 1.7V to 2V supply, making it a natural fit for 1.8V system rails without additional level translation. The part is targeted at applications that need a large scratchpad, display frame buffer, or code-shadowing memory where the simplicity of a serial interface and the density of a DRAM-like cell (managed internally as PSRAM) beat the cost or board area of a true SRAM.
200 MHz Octal I/O and 35 ns access — what they mean for throughput
The Octal SPI interface runs at 200 MHz, delivering a theoretical peak data rate of 200 MB/s (200 MHz x 8 bits per cycle). The 35 ns access time covers the initial random-access latency; once the device is in page mode, subsequent reads within the same row run at the full clock rate. For a design currently using a Quad SPI Flash for code execution and needing a separate RAM for dynamic data, this part can often share the same bus with a chip-select mux, simplifying layout. The 35 ns write cycle time per word or page matches the read access, so mixed read-write workloads see symmetric latency.