Infineon GL-T series S29GL512T10FHI010, 512Mbit NOR Flash, parallel interface, 100 ns access time, 2.7V-3.6V supply, -40°C to 85°C, 64-FBGA (13x11).
| Parameter | Value |
|---|---|
| Series | GL-T |
| Memory type | Non-Volatile |
| Mounting | Surface Mount |
| Supply voltage | 2.7V ~ 3.6V |
| Memory interface | Parallel |
| Operating temperature | -40°C ~ 85°C (TA) |
| Package | Tray |
| Technology | FLASH - NOR |
| Access time | 100 ns |
| Memory size | 512Mbit |
| Memory format | FLASH |
| Case | 64-LBGA |
| Memory organization | 64M x 8 |
| Write cycle time - word, page | 60ns |
The 100 ns access time sets the window for the host controller to latch valid data after asserting the address. The write cycle time for word and page operations is 60 ns.
For dual-sourcing or supply resilience, the S29GL512T11TFIV20 is a same-density sibling with a 110 ns access time — functionally interchangeable in most designs if the slight timing difference is acceptable.
The access time is 100 ns, which determines the number of wait states required on the host bus.