512 Mbit parallel NOR flash — 110 ns access, industrial temp
The Infineon S29GL512S11TFV020 is a 512 Mbit parallel NOR flash memory from the GL-S family, organized as 32M x 16 bits.
The 110 ns access time is the read-cycle ceiling the host controller must respect. In a typical parallel NOR interface, the controller's chip-select to data-valid window needs to accommodate this delay; if your processor runs at a bus clock that demands faster turn-around, you either stretch the cycle or move to a 100 ns or 90 ns speed grade. At 110 ns this part sits in the standard-speed tier, well matched to legacy 8- and 16-bit MCUs and FPGAs that don't push the bus beyond ~10 MHz. The 60 ns word/page write cycle time is a separate spec — that's the program pulse width, not the read path.
2.7 V supply — single-rail simplicity
Rated for a 2.7 V supply, this flash runs directly from a 3.0 V or 3.3 V rail without a dedicated regulator. That saves a BOM line and a PCB via. The parallel interface signals are 2.7 V tolerant on the input side, so a 3.3 V host can drive them with no level translation — just check the host's VIH/VIL thresholds against the flash's 2.7 V VDD to confirm noise margin. The memory is non-volatile FLASH, so code and data survive power loss without a backup battery.
That extra headroom matters in enclosures with solar load, near hot exhaust paths, or in equipment that must start cold and then self-heat. The 105°C rating also aligns with AEC-Q100 Grade 1 automotive requirements, though this part does not carry an explicit AEC-Q100 qualifier in the record — verify if your program requires the automotive-grade variant.
Lifecycle and sourcing
That removes the single-source risk that haunts older NOR flash parts.