S29GL256S10TFV010

Infineon Technologies · GL-S Series

Infineon GL-S series S29GL256S10TFV010, 256 Mbit parallel NOR Flash, 100 ns access time, 2.7V-3.6V supply, 56-TSOP, -40°C to +105°C, tray.

Infineon Technologies S29GL256S10TFV010
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[IN STOCK] In Stock: 1 pcs
$11.78/ pc

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MOQ 1 · Tray · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

S29GL256S10TFV010 specifications
Parameter / AttributeSpecification / Value
SeriesGL-S
Memory typeNon-Volatile
MountingSurface Mount
Supply voltage2.7V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C ~ 105°C (TA)
PackageTray
TechnologyFLASH - NOR
Access time100 ns
Memory size256Mbit
Memory formatFLASH
Case56-TFSOP (0.724\", 18.40mm Width)
Memory organization16M x 16
Write cycle time - word, page60ns

Technical details

Parallel NOR Flash for embedded code storage

The Infineon S29GL256S10TFV010 is a 256 Mbit parallel NOR Flash memory from the GL-S series, organized as 16M x 16 bits. It delivers a 100 ns access time over a 2.7 V to 3.6 V supply rail. The 60 ns page write cycle keeps firmware field-update times reasonable — a full 256 Mbit erase-and-rewrite runs in seconds, not minutes.

The ROHS3 compliance is current and covers EU and UKCA regulatory filings without exemption paperwork.

Sourcing and fit for production

The GL-S series is a mature, high-volume product line with broad distribution coverage. When you need to qualify this part into a new design or fill a shortage on an existing BOM, the active status means factory orders are still being accepted.

S29GL256S10TFV010
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