256 Mbit parallel NOR flash for code shadowing and data logging
The Infineon S29GL256S10DHIV20 is a 256 Mbit parallel NOR flash memory from the GL-S series, organized as 16M x 16 bits. It provides a 100 ns access time over a wide supply range of 1.65V to 3.6V, making it suitable for both legacy 1.8V and 3.3V system buses. The 60 ns write cycle time (word/page) supports efficient firmware updates and data logging in embedded systems. Packaged in a 64-FBGA (9x9 mm), it is intended for surface-mount assembly on industrial and telecom PCBs where reliable, long-life code storage is required.
100 ns access time — bus timing margin
For a host controller running at 50 MHz (20 ns cycle), this means the flash needs about five clock cycles before the first read data appears. Compared to the 512 Mbit GL-T sibling (S29GL512T11TFIV20) with a 110 ns access time, this part offers a 10 ns faster read path — a meaningful margin when the memory bus is shared with other peripherals or when the controller's chip-select-to-output timing is tight.
The 64-FBGA (9x9 mm) package has a 0.8 mm ball pitch typical of this density class.