Infineon Technologies S29GL01GT11TFV020 — Memory (DRAM / SRAM / Flash / EEPROM)
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Infineon Technologies / Memory (DRAM / SRAM / Flash / EEPROM)

Infineon S29GL01GT11TFV020 1Gbit NOR Flash, 110 ns, Parallel

MPN S29GL01GT11TFV020
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Infineon Technologies GL-T series NOR Flash, S29GL01GT11TFV020, 1Gbit, Parallel interface, 110 ns access time, 2.7V supply, -40°C to +105°C, 56-TSOP.

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[SPEC] Essential Parameters Snapshot Full Specifications (13)
Supply Voltage 2.7

Full Technical Specifications

13 Parameters
S29GL01GT11TFV020 specifications
Parameter / AttributeSpecification / Value
SeriesGL-T
InterfaceParallel
MountingSurface Mount
Operating temperature high-40°C to 105°C (TA)
Frame_size1Gbit
Access time110 ns
Memory typeNon-Volatile
Package_typeBulk
Memory formatFLASH
StatusActive
Supply voltage2.7
Memory organization128M x 8
Write cycle time - word, page60ns
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Technical Details & Description

1 Gbit parallel NOR for code-shadowing and data-logging

The S29GL01GT11TFV020 is a 1 Gbit parallel NOR Flash from the GL-T series, organized as 128 M x 8 bits. With a 110 ns access time and a 2.7 V supply, it is designed for applications that need fast, random-access read performance from non-volatile memory — typically code shadowing in embedded systems, boot firmware storage, or data logging where the system reads the flash directly on the bus. The 56-TSOP package (surface mount, parallel interface) means it connects directly to a memory controller or ASIC with a standard parallel address/data bus — no serial conversion latency, but the pin count demands a board layout that routes 24 address lines plus 8 data lines cleanly.

Temperature grade and endurance budget

The 110 ns access time is the ceiling for random reads; the page-mode burst reads at 60 ns per word after the initial access, which matters when the CPU fetches a cache line or boots a kernel from flash. Retention is a temperature spec — at 105°C the charge loss rate accelerates, so the datasheet's retention guarantee (typically 20 years at 85°C) derates at the upper end. Budget the ECC if the system runs continuous reads in the hot zone; read-disturb accumulates over millions of reads without a rewrite cycle.

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Frequently asked questions

How does S29GL01GT11TFV020 compare to the S29GL512T11TFIV20?

The S29GL512T11TFIV20 is the 512 Mbit sibling in the same GL-T series — half the density, same 110 ns access time and parallel interface, but organized as 64 M x 8 instead of 128 M x 8. The supply voltage differs: 1.65 V for the 512 Mbit part versus 2.7 V for the 1 Gbit part, so a board designed for one voltage rail cannot drop in the other without a regulator change.

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S29GL01GT11TFV020
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