Infineon GL-T series S29GL01GT10DHI010, 1 Gbit parallel NOR Flash, 100 ns access time, 2.7-3.6 V supply, 128M x 8 organization, -40 to 85°C, 64-FBGA (9x9 mm), tray.
| Parameter | Value |
|---|---|
| Series | GL-T |
| Memory type | Non-Volatile |
| Mounting | Surface Mount |
| Supply voltage | 2.7V ~ 3.6V |
| Memory interface | Parallel |
| Operating temperature | -40°C ~ 85°C (TA) |
| Package | Tray |
| Technology | FLASH - NOR |
| Access time | 100 ns |
| Memory size | 1Gbit |
| Memory format | FLASH |
| Case | 64-LBGA |
| Memory organization | 128M x 8 |
| Write cycle time - word, page | 60ns |
The Infineon S29GL01GT10DHI010 is a 1 Gbit parallel NOR Flash memory from the GL-T series, organized as 128M x 8 bits. It delivers a 100 ns access time over a 2.7 V to 3.6 V supply rail.
The 100 ns access time sets the read-cycle window the host controller must meet.
Yes. The supply voltage range is 2.7 V to 3.6 V, so it operates directly on a 3.3 V rail without external regulation or level translation for the memory interface.