1 Gbit parallel NOR Flash — what it fits
The Cypress S29GL01GS11TFIV10 is a 1 Gbit parallel NOR Flash memory from the GL-S series, organized as 64M x 16 bits. It delivers a 110 ns access time over a 1.65 V to 3.6 V supply range, suiting designs that need a single large NOR device for code shadowing or data logging in industrial and telecom equipment. The 56-TSOP surface-mount package and -40°C to 85°C industrial temperature grade match the environmental requirements of outdoor base stations, motor drives, and factory automation controllers.
110 ns access time — bus timing margin
The access time is 110 ns.
Supply range and I/O compatibility
The supply range is 1.65 V to 3.6 V.
Write-cycle timing and page programming
Word and page write-cycle time is 60 ns. That is the programming pulse width, not the erase time — sector erase takes the usual NOR Flash duration (hundreds of milliseconds). For field firmware updates, plan for a multi-second erase-and-write cycle per sector. The 64M x 16 organization means each write access transfers 16 bits, so large updates benefit from page-mode programming to reduce total write time.