1 Gbit parallel NOR Flash — density and bus timing for embedded systems
The Infineon S29GL01GS11FHIV13 is a 1 Gbit parallel NOR Flash memory from the GL-S series, organized as 64M x 16 bits. It provides non-volatile storage with a 110 ns access time and a 60 ns word/page write cycle, operating from a 1.65V to 3.6V supply. This density tier suits applications requiring a single-chip code-plus-data store — boot firmware, configuration tables, and field-updatable application images — in industrial and telecom equipment where the parallel interface simplifies controller integration and the NOR architecture supports fast random reads for execute-in-place (XIP) execution.
The 110 ns access time and 60 ns write cycle define the bus timing for parallel NOR controllers.
The 64-FBGA package (13x11 mm) requires controlled reflow profiling and X-ray inspection for solder joint verification.