Infineon Technologies S29CD016J0MFAM010 — DC-DC Power Modules
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RoHS Compliant · Lead-Free EIA-481 Standard
Infineon Technologies / DC-DC Power Modules

S29CD016J0MFAM010 16Mbit Parallel NOR Flash, 54 ns Access

MPN S29CD016J0MFAM010
End of Life Spot Stock · 24-48h Dispatch 100% Original Sealed

Infineon (Cypress) CD-J series, S29CD016J0MFAM010, 16Mbit (512K x 32) Parallel NOR Flash, 54 ns access time, 56 MHz clock, 1.65V–2.75V supply, -40°C to 125°C, 80-FBGA (13x11 mm) tray.

In Stock: 180 pcs
MOQ: 1 pcs
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Dispatch: Shenzhen / HK
Unit Price (USD)
$7.15 / pc
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1+ pcs
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10+ pcs
$6.44
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$7.15 / ea

180 in stock — maximum per order · 3–4 days lead time

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[SPEC] Essential Parameters Snapshot Full Specifications (15)
Package / Case 80-LBGA
Supply Voltage 1.65V ~ 2.75V
Speed / Frequency 56 MHz
Memory / RAM 16Mbit

Full Technical Specifications

15 Parameters
S29CD016J0MFAM010 specifications
Parameter / AttributeSpecification / Value
SeriesCD-J
Memory typeNon-Volatile
MountingSurface Mount
Supply voltage1.65V ~ 2.75V
Clock frequency56 MHz
Memory interfaceParallel
Operating temperature-40°C ~ 125°C (TA)
PackageTray
TechnologyFLASH - NOR
Access time54 ns
Memory size16Mbit
Memory formatFLASH
Case80-LBGA
Memory organization512K x 32
Write cycle time - word, page60ns
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Technical Details & Description

54 ns access time on a 56 MHz bus — what it buys you

The S29CD016J0MFAM010 is a 16Mbit parallel NOR flash from Infineon's CD-J series, organized as 512K x 32 bits. Its 54 ns access time and 56 MHz clock rate mean the memory controller can perform synchronous burst reads with zero wait states on most 32-bit MCU/FPGA buses operating up to 56 MHz. The wide supply range (1.65V to 2.75V) lets it run directly from a 1.8V or 2.5V rail without a separate regulator, simplifying the power tree in space-constrained designs.

The 54 ns access time holds across the full temperature range, so timing closure at 125°C is the same as at 25°C — no derating needed for read cycles.

Parallel interface, 32-bit data bus

The 512K x 32 organization gives a full 32-bit word per read cycle, matching the native bus width of ARM Cortex-M or RISC-V MCUs without byte-lane multiplexing. Write cycle time per word or page is 60 ns, allowing fast firmware updates or parameter storage. The memory is non-volatile NOR flash, so it supports execute-in-place (XIP) for boot code — no need to shadow to RAM first.

Note that it is RoHS non-compliant (per the supplier), so it is not suitable for new designs requiring RoHS exemption-free compliance. For RoHS-compliant alternatives in the same density, consider the S29AL016J70BFI023 (70 ns, 2.7V min, -40 to 85°C) or the S26KS128SDPBHV020 (128Mbit, 166 MHz HyperFlash).

Frequently asked questions

Is S29CD016J0MFAM010 RoHS compliant?

No, this part is listed as RoHS non-compliant. If your BOM requires RoHS compliance, consider the S29AL016J70BFI023 (70 ns, 2.7V–3.6V, -40 to 85°C) or the S26KS128SDPBHV020 (128Mbit, 166 MHz HyperFlash).

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