Infineon AL-J series, 16 Mbit Parallel NOR Flash, 70 ns access time, 2.7 V to 3.6 V supply, AEC-Q100 qualified, -40°C to 85°C, 48-TSOP package, Tray.
| Parameter | Value |
|---|---|
| Series | AL-J |
| Memory type | Non-Volatile |
| Mounting | Surface Mount |
| Supply voltage | 2.7V ~ 3.6V |
| Memory interface | Parallel |
| Operating temperature | -40°C ~ 85°C (TA) |
| Grade | Automotive |
| Package | Tray |
| Technology | FLASH - NOR |
| Access time | 70 ns |
| Memory size | 16Mbit |
| Memory format | FLASH |
| Qualification | AEC-Q100 |
| Case | 48-TFSOP (0.724\", 18.40mm Width) |
| Memory organization | 2M x 8, 1M x 16 |
| Write cycle time - word, page | 70ns |
The Infineon (formerly Cypress) S29AL016J70TFA020 is a 16 Mbit parallel NOR Flash memory from the AL-J series, organized as 2 M x 8 or 1 M x 16. It operates from a single 2.7 V to 3.6 V supply and provides a 70 ns access time, making it suitable for code shadowing, parameter storage, and firmware updates in embedded systems that require fast random reads.
The write cycle time — word and page — is also 70 ns.
The S29AL016J70TFI020 is the same die and electrical specifications, but the suffix 'A' in the TFA020 variant indicates AEC-Q100 automotive qualification. The TFI020 is the industrial-grade (non-automotive) version. They are pin-compatible and functionally identical, but only the TFA020 carries the automotive stress-test pedigree required for automotive BOMs.
The device is organized as 2 M x 8 bits (byte mode) or 1 M x 16 bits (word mode), selectable via the BYTE# pin. Total density is 16 Mbit.
Yes, it is ROHS3 compliant, meaning it meets the EU RoHS directive with no exemptions for lead in solder or other restricted substances.