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Infineon Technologies S27KS0642GABHV020 — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon S27KS0642GABHV020 HyperRAM, 64Mbit, 200 MHz

MPNS27KS0642GABHV020
End of Life

Infineon Technologies HyperRAM™ KS PSRAM, 64Mbit, HyperBus interface, 200 MHz clock, 24-FBGA (6x8 mm), Tray.

$5.81Ref. price · indicative, final on quote
Packaging24-VBGA
RoHSROHS3 Compliant
SeriesHyperRAM™ KS
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

S27KS0642GABHV020 specifications
ParameterValue
SeriesHyperRAM™ KS
Memory typeVolatile
MountingSurface Mount
Voltage1.7V ~ 2V
Frequency200 MHz
Memory interfaceHyperBus
Operating temperature-40°C ~ 105°C (TA)
PackageTray
TechnologyPSRAM (Pseudo SRAM)
Access time35 ns
Memory size64Mbit
Memory formatPSRAM
Case24-VBGA
Memory organization8M x 8
Write cycle time - word, page35ns

Product details

Active production — no end-of-life concern

The S27KS0642GABHV020: ROHS3 compliant, so it ships without restriction into RoHS-regulated markets.

64 Mbit PSRAM with HyperBus — what the interface means for throughput

This is a 64 Mbit PSRAM (pseudo-SRAM) organized as 8M x 8 bits, using the HyperBus memory interface. HyperBus is a high-speed, low-pin-count protocol that delivers read/write throughput up to 400 MB/s at 200 MHz double-data-rate — the 200 MHz clock frequency is the base rate; the interface toggles on both edges. Access time is 35 ns, and the write cycle time for word/page operations is also 35 ns, giving deterministic latency for the controller to budget in the bus timing.

Industrial temperature range and supply voltage

The 1.7 V to 2 V supply rail means the memory runs from a low-voltage core rail — the board designer must ensure the regulator stays within that narrow window across load transients.