Automotive-grade parallel NOR Flash for code storage
The Infineon S26KS256SDGBHM030 is a 256 Mbit parallel NOR Flash memory from the Automotive AEC-Q100 HyperFlash™ KS series. The device supports synchronous read speeds up to 133 MHz and delivers a 96 ns initial access time, which is typical for high-reliability code-shadowing and execute-in-place (XIP) applications in engine control units, ADAS modules, and telematics systems.
Temperature range and deployment environment
The AEC-Q100 qualification (grade 1 implied by the temperature range) means it has passed the automotive reliability stress tests for moisture sensitivity, solder reflow, and extended life. For a BOM destined for a passenger-vehicle ECU or an industrial controller that sees similar thermal extremes, this is the temperature grade that avoids a qualification re-run.
Parallel interface and bus timing
The parallel interface (multiplexed address/data on a 8-bit bus) is the standard for NOR Flash in systems that need fast random-access reads without the latency of SPI or Quad-SPI. The 96 ns access time sets the bus-turnaround budget for the memory controller — if the host MCU runs at 133 MHz, the first read takes 96 ns, then subsequent synchronous bursts at the clock rate. This matters when sizing the wait states in the memory controller register; a 96 ns access at 133 MHz (7.5 ns period) means about 13 wait states on the first access, then zero-wait bursts. The 1.7 V supply rail also means the I/O levels match low-voltage SoCs directly, saving a level shifter.