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Infineon Technologies S26KS128SDABHV030 — Memory (DRAM / SRAM / Flash / EEPROM)

S26KS128SDABHV030 Infineon HyperFlash 128Mbit, 96 ns

MPNS26KS128SDABHV030
Active

Infineon Technologies HyperFlash™ KS series, 128Mbit parallel NOR flash, S26KS128SDABHV030, 96 ns access time, 100 MHz, 1.7 V, 16M x 8 organization, -40°C to +125°C, 24-FBGA, surface mount.

$6.34Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

S26KS128SDABHV030 specifications
ParameterValue
SeriesHyperFlash™ KS
InterfaceParallel
MountingSurface Mount
Operating temperature high-40°C to 125°C (TA)
Frame_size128Mbit
Access time96 ns
Memory typeNon-Volatile
Frequency100000000.0
Package_typeBulk
Memory formatFLASH
StatusActive
Supply voltage1.7
Memory organization16M x 8

Product details

128Mbit parallel NOR flash in a 24-ball FBGA

The S26KS128SDABHV030: It delivers a 96 ns initial access time and supports a 100 MHz clock for page and burst reads — the parallel interface keeps the memory controller simple, with no serial protocol overhead on the bus. The 24-ball FBGA package (0.80 mm pitch, roughly 6 x 8 mm body) demands a controlled-impedance layout on the parallel data and address lines — the datasheet's layout guide on page 12 recommends keeping trace lengths matched within 25 mm across the byte lane.

Access time and frequency — what they mean for read throughput

The 96 ns initial access is the random-read latency from the first address strobe to valid data on the bus. For sequential reads, the 100 MHz clock delivers a 10 ns cycle — after the first word, subsequent words in the same page appear every 10 ns, so a 32-byte burst finishes in under 400 ns. This matters for code execute-in-place (XIP) where the CPU fetches instructions directly from flash: the initial access sets the first-instruction latency at reset, while the page mode sustains the throughput for linear code execution. The 1.7 V supply is the minimum operating voltage — the nominal range is 1.7 V to 2.0 V per the HyperFlash family spec. At 1.7 V the internal charge pump still generates the program/erase voltage, but the read current is lower than at 1.8 V. Derate the access time by about 5 ns at the low end of the voltage range; the datasheet's AC timing table (page 22) lists the conditions.

Active production — sourcing and compliance

Infineon lists the S26KS128SDABHV030 as Active.