128 Mbit HyperFlash™ KS — parallel NOR Flash for high-reliability embedded
The Infineon S26KS128SDABHN030 is a 128 Mbit parallel NOR Flash memory from the HyperFlash™ KS family, organized as 16M x 8 bits. It delivers a 96 ns initial access time and supports a 100 MHz clock for sustained read throughput, making it suitable for execute-in-place (XIP) code storage in microcontrollers and SoCs that require fast random-read latency.
96 ns access time and 100 MHz clock — bus timing margin
The 96 ns random-access time sets the ceiling for the first read after a new address is presented. In a system with a 100 MHz bus, the page-mode or burst reads sustain throughput without dead cycles, but the initial latency still governs the worst-case interrupt or boot fetch. If your controller's memory controller has a programmable wait-state generator, budget for the 96 ns tACC at 1.7 V across temperature — the datasheet's AC timing table is the reference, not the typical column.
The 1.7 V operating voltage aligns with 1.8 V nominal rails that dip during load transients or battery discharge.
The parallel HyperFlash™ interface is a standard footprint across the KS series, which simplifies second-sourcing within the family if supply needs shift.