S26KL512SDABHB020

Infineon Technologies · Automotive, AEC-Q100, HyperFlash™ KL Series

Infineon Technologies, Automotive AEC-Q100 HyperFlash™ KL series, NOR Flash memory, S26KL512SDABHB020, 512 Mbit, 96 ns access, 100 MHz, 2.7-3.6 V, -40 to +105°C, 24-VBGA, Tray.

Infineon Technologies S26KL512SDABHB020
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[IN STOCK] In Stock: 32 pcs
$9.48/ pc

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Technical specifications

S26KL512SDABHB020 specifications
Parameter / AttributeSpecification / Value
SeriesAutomotive, AEC-Q100, HyperFlash™ KL
Memory typeNon-Volatile
MountingSurface Mount
Supply voltage2.7V ~ 3.6V
Clock frequency100 MHz
Memory interfaceParallel
Operating temperature-40°C ~ 105°C (TA)
PackageTray
TechnologyFLASH - NOR
Access time96 ns
Memory size512Mbit
Memory formatFLASH
Case24-VBGA
Memory organization64M x 8

Technical details

512 Mbit parallel NOR, 24-FBGA footprint

The S26KL512SDABHB020 is a 512 Mbit parallel NOR flash from Infineon's Automotive AEC-Q100 HyperFlash™ KL family, organized as 64M x 8 bits. The 24-VBGA package (6x8 mm body, 24-FBGA) demands a 4-layer board for fan-out of the fine-pitch BGA.

Access time and clock rate — the read-performance ceiling

At 100 MHz, the parallel interface delivers sustained read throughput limited by the 96 ns random access time. The first-word latency is 96 ns; subsequent words in a page burst follow at the clock rate — the effective bandwidth depends on burst length and the controller's prefetch policy.

S26KL512SDABHB020
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